unisonic technologies co., ltd 1n70z power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2012 unisonic technologies co., ltd qw-r502-723.b 1.2a, 700v n-channel power mosfet ? description the utc 1n70z is a high voltage mosfet designed to have better characteristics, such as fa st switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) =13.5 ? @v gs = 10v. * ultra low gate charge (typical 5.0nc) * low reverse transfer capacitance (c rss = typical 3.0 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 2.drain 3.source 1.gate ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 1n70zl-t92-b 1n70zg-t92-b to-92 g d s tape box 1n70zl-t92-k 1n70zg-t92-k to-92 g d s bulk 1N70ZL-T92-R 1n70zg-t92-r to-92 g d s tape reel
1n70z power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-723.b ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 20 v avalanche current (note 2) i ar 1.2 a continuous drain current i d 1.2 a pulsed drain current (note 2) i dm 4.8 a avalanche energy single pulsed (note 3) e as 50 mj repetitive (note 2) e ar 4.0 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 3 w junction temperature t j +150 operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 60mh, i as = 1a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 1.2a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 79 /w junction to case jc 29 /w ? electrical characteristics (t c =25 , unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 700 v drain-source leakage current i dss v ds = 700v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 20v, v ds = 0v +5 a reverse v gs = -20v, v ds = 0v -5 a breakdown voltage temperature coefficient bv dss /t j i d = 250 a 0.4 v/ on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 0.6a 9.3 13.5 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1mhz 120 150 pf output capacitance c oss 20 25 pf reverse transfer capacitance c rss 3.0 4.0 pf switching characteristics turn-on delay time t d ( on ) v dd =350v, i d =1.2a, r g =50 ? (note 2,3) 5 20 ns turn-on rise time t r 25 60 ns turn-off delay time t d ( off ) 7 25 ns turn-off fall time t f 25 60 ns total gate charge q g v ds =560v, v gs =10v, i d =1.2a (note 2,3) 5.0 6.0 nc gate-source charge q gs 1.0 nc gate-drain charge q gd 2.6 nc
1n70z power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-723.b ? electrical characteristics (t c =25 , unless otherwise specified.) parameter symbol test conditions min typ max unit source-drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v, i s = 1.2a 1.4 v maximum continuous drain-source diode forward current i s 1.2 a maximum pulsed drain-source diode forward current i sm 4.8 a reverse recovery time t r r v gs =0v, i s = 1.2a di f /dt = 100a/ s (note1) 160 ns reverse recovery charge q rr 0.3 c notes: 1. repetitive rating: pulse widt h limited by maximum junction temperature 2. pulse test: pulse width 300 s, duty cycle 2% 3. essentially independent of operating temperature
1n70z power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-723.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
1n70z power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-723.b ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
1n70z power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-723.b ? typical characteristics 10 0 10 -1 10 1 10 -1 10 0 drain-source voltage, v ds (v) output characteristics 250 s pulse test t c =25 10 -2 v gs top: 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v bottorm:5.5v 10 0 10 -1 2 gate-source voltage, v gs (v) transfer characteristics 46 810 -40 125 25 v ds =50v 250 s pulse test 0 0.0 drain-source on-resistance, r ds(on) ( ) drain current, i d (a) 0.5 1.0 2.5 v gs =10v t j =25 v gs =20v 1.5 2.0 5 10 15 25 30 on-resistance vs. drain current 20 10 0 10 -1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) source- drain diode forward voltage 1.6 25 0.4 0.6 0.8 1.0 1.2 1.4 125 v gs =0v 250 s pulse test capacitance (pf) gate-source voltage, v gs (v)
1n70z power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-723.b ? typical characteristics(cont.) drain-source breakdown voltage, bv dss, (normalized) (v) drain-source on-resistance, r ds(on) (normalized) ( ? ) drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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